MRF186 Datasheet (Motorola) - The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR

MRF186, The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR

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2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF186/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz.

The high gain and broadband performance of this device make it ideal for large signal, common source amplifier applications in 28 volt base station equipmen

MRF186 Features

* MENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.085 0.115 0.42