MMFT960T1 Datasheet (Motorola)

MMFT960T1, MEDIUM POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT960T1/D Medium Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS SOT 223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dc dc converters, solenoid and relay drivers.

The device is housed in the SOT 223 package which is designed for medium power surface

MMFT960T1 Features

* C for more than 10 seconds. TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control setting