MMFT1N10E Datasheet (Motorola) - MEDIUM POWER MOSFET

MMFT1N10E, MEDIUM POWER MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT1N10E/D Medium Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS E FETt SOT 223 for Surface Mount This advanced E FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient device also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed swit

MMFT1N10E Features

* t, (TIME) IL(t) Figure 12. Unclamped Inductive Switching Test Circuit Figure 13. Unclamped Inductive Switching Waveforms Motorola TMOS Power MOSFET Transistor Device Data 5 MMFT1N10E VGS 1400 1200 Crss C, CAPACITANCE (pF) 1000 800 600 Ciss 400 200 0 20 15 10 5 0 5 Coss Crss 10 15 20 Coss Ciss V