MMFT2N25E Datasheet (Motorola)

MMFT2N25E, Power MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2N25E/D Product Preview TMOS E-FET™ High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching applications such as power supplies

MMFT2N25E Features

* or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damag