MMFT2406T1 Datasheet (Motorola) - MEDIUM POWER MOSFET

MMFT2406T1, MEDIUM POWER MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2406T1/D Medium Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS E FET™ SOT 223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.

The device is housed in the SOT 223 package which is designed for medium power surface mount

MMFT2406T1 Features

* STEP 7 STEP 5 STEP 4 VENT COOLING HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 205° TO “SPIKE” “SOAK” 219°C 170°C PEAK AT SOLDER 160°C JOINT SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 2. Typical Solder H