MMFT3055EL Datasheet (Motorola) - MEDIUM POWER MOSFET

MMFT3055EL, MEDIUM POWER MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT3055EL/D Medium Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS E FETt SOT 223 for Surface Mount This advanced E FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and commutation modes.

This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts.

This new energy efficient device also offers a drain to

MMFT3055EL Features

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* SOURCE VOLTAGE (VOLTS) VR = 80% OF RATED VDSS VdsL = Vf + Li ⋅ dlS/dt Figure 10. Commutating Safe Operating Area (CSOA) Figure 11. Commutating Safe Operating Area Test Circuit BVDSS L VDS IL VDD t RG VDD tP t, (TIME) IL(t) Figure 12. Unclamped Inductive Switching Test Circuit Figure 13. Un