2N3081 Datasheet (Motorola) - PNP SILICON TRANSISTOR

2N3081, PNP SILICON TRANSISTOR

3081 2N (SIUCON) PNP SILICON ANNULAR TRANSISTOR ..

designed for medium-speed switching and general-purpose amplification applications in industrial service.

High Collector-Base Breakdown Voltage BVCBO = 70 Vdc (Min) @ IC = 10 /LAdc Low Collector-Emitte'r Saturation Voltage VCE(sat) = 0.3 Vdc (Max) @ IC = 150 mAdc PNPSILICON TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Ba..

Voltage Emitter-Base Voltage Collector Current - Continuous Tota