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RD04LUS2 - Silicon RF Power MOSFET

Description

RD04LUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

Features

  • High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=280mA, Pin=0.4W, f=527MHz Integrated gate protection diode.

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< Silicon RF Power MOS FET (Discrete) > RD04LUS2 RoHS Compliance, Silicon MOSFET Power Transistor,527MHz,4W,3.6V DESCRIPTION RD04LUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. FEATURES High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=280mA, Pin=0.4W, f=527MHz Integrated gate protection diode. OUTLINE DRAWING APPLICATION For output stage of high power amplifiers in VHF/UHF-band mobile radio sets. RoHS COMPLIANT RD04LUS2-501, T512, T514 is EU RoHS compliant.
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