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M54587P - 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY

Description

M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays.

The circuits are made of PNP and NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Features

  • q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (IC(max) = 500mA) q “L” active level input q With input diode q With clamping diodes q Wide operating temperature range (Ta =.
  • 20 to +75° C) IN6 IN7 IN8 GND 20P4(P) Package type 20P2N-A(FP).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI SEMICONDUCTOR M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
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