M54583FP - 8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY
Mitsubishi Electric
Download the M54583FP datasheet PDF.
This datasheet also covers the M54583P variant, as both devices belong to the same 8 unit 400ma darlington transistor array family and are provided as variant models within a single manufacturer datasheet.
General Description
M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays.
The circuits are made of PNP and NPN transistors.
Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
Key Features
q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (Ic(max) = 400mA) q Active L-level input q With input clamping diodes q Wide operating temperature range (Ta =.
Full PDF Text Transcription for M54583FP (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
M54583FP. For precise diagrams, and layout, please refer to the original PDF.
INGTON TRANSISTOR ARRAY PIN CONFIGURATION (TOP VIEW) DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
M54583FP Datasheet
