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M54583P - 8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY

General Description

M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays.

The circuits are made of PNP and NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (Ic(max) = 400mA) q Active L-level input q With input clamping diodes q Wide operating temperature range (Ta =.
  • 20 to +75 °C) IN7→ 7 IN8→ 8 GND 9 Outline 18P4G M54583FP.

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Full PDF Text Transcription for M54583P (Reference)

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www.DataSheet4U.com POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY PIN CONFIGURATION (TOP VIEW) DESCRIPTION M5458...

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INGTON TRANSISTOR ARRAY PIN CONFIGURATION (TOP VIEW) DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

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