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RD12MVS1 - Silicon RF Power MOS FET

Description

RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

Features

  • High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< Silicon RF Power MOS FET (Discrete) > RD12MVS1 RoHS Compliant, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING FEATURES High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD12MVS1 is EU RoHS compliant product. RoHS compliant product is indicating by the letter “ZG” after the Lot Marking.