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RD12MVP1 - Silicon MOSFET Power Transistor

General Description

RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

Key Features

  • High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz.
  • High Efficiency: 55%min. (175MHz).
  • No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source For output stage of high power amplifiers in VHF band mobile radio sets. SIDE VIEW Standoff = max 0.05.

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Other Datasheets by Mitsubishi Electric

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 (a) 0.2+/-0.05 0.65+/-0.2 (c) (b) (b) 7.0+/-0.2 8.0+/-0.2 6.2+/-0.2 5.6+/-0.2 (d) 4.2+/-0.2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W DESCRIPTION RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING FEATURES •High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz •High Efficiency: 55%min. (175MHz) •No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source For output stage of high power amplifiers in VHF band mobile radio sets.