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RD16HHF1 - Silicon MOSFET Power Transistor

General Description

RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

Key Features

  • High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode 12.3+/-0.6 3.2+/-0.4 4.8MAX 9+/-0.4.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< Silicon RF Power MOS FET (Discrete) > RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode 12.3+/-0.6 3.2+/-0.4 4.8MAX 9+/-0.4 OUTLINE DRAWING 9.1+/-0.7 3.6+/-0.2 2 1.2+/-0.4 0.8+0.10/-0.15 1.3+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets. 123 2.5 2.5 5deg 0.5+0.10/-0.15 3.1+/-0.6 4.5 +/- 0.5 RoHS COMPLIANT RD16HHF1-501 is a RoHS compliant product. PINS 1: GAT E 9.5MAX 2:SOURCE note: 3:DRAIN Torelance of no designation means typical value. Dimension in mm.