ICE30N60W - N-Channel MOSFET

Micross Components

ICE30N60W Datasheet Preview — Preview of ICE30N60W PDF

Datasheet Details

Part number	ICE30N60W
Manufacturer	Micross Components
File Size	709.84 KB
Description	N-Channel MOSFET
Datasheet	ICE30N60W-MicrossComponentspdf

ICE30N60W Product details

Description

G TO-247 Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 30 103 1100 18 50 ±20 ±30 313 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 18A Limited by Tjmax VDS

Features

r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 30A 600V 0.075Ω 187nC Pin.

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Published: Sep 24, 2016 |