MSAFX50N20A Datasheet (Microsemi Corporation) - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MSAFX50N20A, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX.

200 200 +/-20 +/-30 50 40 200 50 30 tbd 5.0 300 -55 to +150 -55 to +150 50 200 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns

MSAFX50N20A Features

* Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse pola