MSAFX10N90A Datasheet (Microsemi Corporation) - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MSAFX10N90A, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX.

900 900 +/-20 +/-30 10 6 40 10 30 tbd 5.0 300 -55 to +150 -55 to +150 10 40 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ

MSAFX10N90A Features

* Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance

* Very low thermal resistance

* Reverse polar