The MSAFX10N90A by Microsemi Corporation is a N-CHANNEL ENHANCEMENT MODE POWER MOSFET. Below is the official datasheet preview.
| Part number | MSAFX10N90A |
|---|---|
| Manufacturer | Microsemi Corporation |
| File Size | 71.37 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 MSAFX10N90A_MicrosemiCorporation.pdf
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Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX.900 900 +/-20 +/-30 10 6 40 10 30 tbd 5.0 300 -55 to +150 -55 to +150 10 40 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts ° C ° C Amps Amps ° C/W Drain-to-Gate Breakdown Voltage @ TJ ≥ 25° C, RGS= 1 MΩ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100° C Tj= 25°
📁 MSAFX10N90A Similar Datasheet
