MSAFX11P50A Datasheet (Microsemi Corporation) - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MSAFX11P50A, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX.

500 500 +/-20 +/-30 11 8 44 11 30 tbd 5.0 300 -55 to +150 -55 to +150 11 44 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V

MSAFX11P50A Features

* High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power