MSAFA1N100D Datasheet (Microsemi Corporation)

MSAFA1N100D, Fast MOSFET Die

* * * N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.

Backside Metallization: Ti * Ni (1 um) * Ag (0.2 um) for soft solder attach Low On-state resi

MSAFA1N100D Features

* MAXIMUM RATINGS: SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25° C Continuous Drain Current @ TC = 100° C Pulsed Drain Current ¬ @