ME8205E Datasheet (Matsuki) - Dual N-Channel MOSFET

ME8205E, Dual N-Channel MOSFET

The ME8205E is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application su

ME8205E Features

* RDS(ON)≦22mΩ@VGS=4.5V

* RDS(ON)≦23mΩ@VGS=4.0V

* RDS(ON)≦26mΩ@VGS=3.0V

* RDS(ON)≦29mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Port