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ME60N03S - N-Channel MOSFET

Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM.

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Datasheet Details

Part number ME60N03S
Manufacturer Matsuki
File Size 1.37 MB
Description N-Channel MOSFET
Datasheet download datasheet ME60N03S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON), Vgs@4.5V,Ids@15A ≦18.5mΩ FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM application.
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