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MwT-PH11F 12-GHz High Power AlGaAs/InGaAs pHEMT

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Description

MwT-PH11F/MwT-PH11FV 12 GHz High Power AlGaAs/InGaAs pHEMT .
The MwT-PH11F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.

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Datasheet Specifications

Part number
MwT-PH11F
Manufacturer
MWT
File Size
1.86 MB
Datasheet
MwT-PH11F-MWT.pdf
Description
12-GHz High Power AlGaAs/InGaAs pHEMT

Features

* 33 dBm of Power at 12 GHz
* 12 dB Small Signal Gain at 12 GHz
* 45% PAE at 12 GHz
* 0.25 x 2400 Micron Refractory Metal/Gold Gate
* Excellent for High Power, and High Power Added Efficiency

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