MwT-11F High Linearity GaAs FET

CML

Description

MwT-11F High Power, High Linearity GaAs FET .
Chip Dimensions: 780 x 345 microns Chip Thickness: 100 microns The MwT-11F is GaAs MESFET device whose nominal 0.

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Datasheet Specifications

Part number: MwT-11F
Manufacturer: CML
File Size: 829.38 KB
Datasheet: MwT-11F-CML.pdf
Description: High Linearity GaAs FET

Features

* 32 dBm Output Power at 8 GHz
* 9 dB Typical Small Signal Gain at 8 GHz
* 0.25 x 2400 Micron Refractory Metal/Gold Gate

Applications

* Ideal for Commercial, Military, Hi-Rel Space Applications

MwT-11F Distributors

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MwT-11F High Linearity GaAs FET CML

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