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MwT-11F High Linearity GaAs FET

MwT-11F Description

MwT-11F High Power, High Linearity GaAs FET .
Chip Dimensions: 780 x 345 microns Chip Thickness: 100 microns The MwT-11F is GaAs MESFET device whose nominal 0.

MwT-11F Features

* 32 dBm Output Power at 8 GHz
* 9 dB Typical Small Signal Gain at 8 GHz
* 0.25 x 2400 Micron Refractory Metal/Gold Gate

MwT-11F Applications

* Ideal for Commercial, Military, Hi-Rel Space Applications

📥 Download Datasheet

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Datasheet Details

Part number
MwT-11F
Manufacturer
CML
File Size
829.38 KB
Datasheet
MwT-11F-CML.pdf
Description
High Linearity GaAs FET

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📌 All Tags

High Linearity GaAs FET CML
CML MwT-11F-like datasheet