Description
This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
DC/DC converter
Power management
LCD backlight inverter
Features
- Q1: N-Channel 4.5 A, 60 V RDS(on) = 40 mΩ @ VGS = 10V RDS(on) = 45 mΩ @ VGS = 4.5V.
 
- Q2: P-Channel.
 
- 3.5 A,.
 
- 60 V RDS(on) = 70 mΩ @ VGS =.
 
- 10V RDS(on) = 81 mΩ @ VGS =.
 
- 4.5V.
 
- RoHS Compliant
DD1DD2DD2 DD1
SO-8
Pin 1 SO-8
SS1GS1SS2GG2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS VGSS ID PD
TJ, TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous
- Pulsed Power Dissipation for Dua.