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MT4966, MT4966-MOS - Dual N-Channel Powe MOSFET

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This datasheet PDF includes multiple part numbers: MT4966, MT4966-MOS. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number MT4966, MT4966-MOS
Manufacturer MOS-TECH
File Size 538.07 KB
Description Dual N-Channel Powe MOSFET
Datasheet download datasheet MT4966-MOS-TECH.pdf
Note This datasheet PDF includes multiple part numbers: MT4966, MT4966-MOS.
Please refer to the document for exact specifications by model.

MT4966 Product details

Description

This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.Applications Synchronous Rectifier Primary Switch For Bridge Topology D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 D1 7 D1 8 Q2 Q1 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Volta

Features

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