MT4966 Datasheet PDF (Dual N-Channel Powe MOSFET)

MT4966 - Dual N-Channel Powe MOSFET

This page provides the datasheet information for the MT4966, a member of the MT4966-MOS Dual N-Channel Powe MOSFET family.

Description

ruggedness.

Synchronous Rectifier Primary Switch For Bridge Topology D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 SO-8

Features

Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A.
Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
100% UIL Tested.
RoHS Compliant General.

Datasheet Details

Part number	MT4966
Manufacturer	MOS-TECH
File Size	538.07 KB
Description	Dual N-Channel Powe MOSFET
Datasheet	MT4966 Datasheet
Additional preview pages of the MT4966 datasheet.

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Full PDF Text Transcription

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MOS-TECH Semiconductor Co.,LTD MT4966 Dual N-Channel Powe MOSFET 100 V, 4.7 A, 102 mΩ Features Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Published: Apr 10, 2017 |