CMPA901A035F Datasheet (MACOM)

CMPA901A035F, Power Amplifier

The CMPA901A035F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate.

The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth.

The GaN HEMT MMIC is housed in a the

CMPA901A035F Features

* 35 W typical PSAT

* >33% typical power added efficiency

* 22.5 dB large signal gain

* High temperature operation Applications

* Military radar

* Marine radar

* Weather radar

* Medical applications Note: Features are typical performa