Download the L2SD2114KWLT1 datasheet PDF.
This datasheet also covers the L2SD2114KxLT1 variant, as both devices belong to the same epitaxial planar type npn silicon transistor family and are provided as variant models within a single manufacturer datasheet.
Features
- 1) High DC current gain. hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) www. DataSheet4U. com3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K.
- LT1
3 1
2 SOT.
- 23 (TO.
- 236AB)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage
VCBO VCEO VEBO
Collector current
IC
Collector power dissipation
Junction temperature Storage temper.