Datasheet Specifications
- Part number
- L2SD2114KVLT3G
- Manufacturer
- Leshan Radio Company
- File Size
- 99.50 KB
- Datasheet
- L2SD2114KVLT3G-LeshanRadioCompany.pdf
- Description
- NPN silicon transistor
Description
Epitaxial planar type LESHAN RADIO COMPANY, LTD.NPN silicon transistor L2SD2114KVLT1G Series z.
Features
* 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for AutomotiveApplications
* Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOTL2SD2114KVLT3G Distributors
📁 Related Datasheet
📌 All Tags