2SA1979S - SILICON PNP TRANSISTOR

Datasheet Details

Large IC,low VCE(sat),complementary pair with the 2SC5342S(3DG5342S). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -40 V VCEO -32 V VEBO -5.0 V IC -500 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-100μA IC=-1.0mA IE=-10μA VCB=-40V VEB=-5.0V VCE=-1.0V IC=-100mA VCE=-6.0V VCB=-6.0V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-100mA IB=-10mA IC=-20mA f=1.0MHz Min -40.

📁 2SA1979S Similar Datasheet

2SA1979SF - PNP Silicon Transistor (AUK corp)
2SA1979 - PNP Silicon Transistor (AUK corp)
2SA1979M - PNP Silicon Transistor (AUK corp)
2SA1979U - PNP Silicon Transistor (AUK corp)
2SA1979UF - PNP Silicon Transistor (AUK corp)
2SA1971 - Silicon PNP Transistor (Toshiba Semiconductor)
2SA1972 - TRANSISTOR (Toshiba Semiconductor)
2SA1973 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

Other Datasheets by LZG

Published: Jul 14, 2017 |