SNN4010D - N-Ch Trench MOSFET

KODENSHI KOREA

Datasheet Details

Drain-source breakdown voltage: BVDSS=100V.
Low gate charge device.
Low drain-source On resistance: RDS(on)=25mΩ (Typ. ).
Advanced trench process technology.
High avalanche energy, 100% test Ordering Information Part Number Marking Package SNN4010D SNN4010 TO-252 D G S TO-252 Marking Information SNN 4010 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise n.

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Published: Jan 24, 2017 |