SNN0630Q - Advanced N-Ch Trench MOSFET

KODENSHI KOREA

Datasheet Details

Low On-state resistance: 28m at VGS = 10V, ID = 2.9A.
Low gate charge: Qg= 4.5nC (Typ. ).
High performance trench technology for extremely low RDS(on).
100% avalanche tested.
Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S SNN0630Q SNN0630 SOT-223 D SOT-223 Marking Information SNN0630 YWW Column 1: Device Code Column 2: Production Information e. g. ) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (T.

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Published: Jan 24, 2017 |