SNN0310Q - Advanced N-Ch Trench MOSFET

KODENSHI KOREA

Datasheet Details

Max. RDS(ON) = 150m at VGS = 10V, ID = 2A.
Low gate charge: Qg=18nC (Typ. ).
High performance trench technology for extremely low RDS(on).
100% avalanche tested.
Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S SNN0310Q SNN0310Q SOT-223 D SOT-223 Marking Information SNN0310Q YWW Column 1: Device Code Column 2: Production Information e. g. ) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unle.

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Published: Jan 24, 2017 |