Datasheet4U Logo Datasheet4U.com

4N60H - N-CHANNEL MOSFET

General Description

The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

2.

Key Features

  • RDS(ON) =2.3Ω@ VGS=10V.
  • Low gate charge (typical 13.5nC).
  • High ruggedness.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 2014 KIA.

📥 Download Datasheet

Datasheet Details

Part number 4N60H
Manufacturer KIA
File Size 467.42 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 4N60H Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
4N60 4A 600V N-channel Enhancement Mode Power MOSFET ROUM
4N60 Power MOSFET Zibo Seno
4N60 N-CHANNEL POWER MOSFET UTC
4N60 N-Channel Power MOSFET nELL
4N60 Surface Mount N-Channel Power MOSFET WEITRON

Other Datasheets by KIA

Part Number Description
4N60 N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
KIA SEMICONDUCTORS 4.0A 600V N-CHANNEL MOSFET 4N60H 1.Description The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features  RDS(ON) =2.3Ω@ VGS=10V  Low gate charge (typical 13.5nC)  High ruggedness  Fast switching capability  Avalanche energy specified  Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 2014 KIA SEMICONDUCTORS 4.0A 600V N-CHANNEL MOSFET 4N60H 4.