4N60H N-CHANNEL MOSFET

KIA

Description

KIA SEMICONDUCTORS 4.0A 600V N-CHANNEL MOSFET 4N60H 1..
The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switch.

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Datasheet Specifications

Part number: 4N60H
Manufacturer: KIA
File Size: 467.42 KB
Datasheet: 4N60H-KIA.pdf
Description: N-CHANNEL MOSFET

Features

* RDS(ON) =2.3Ω@ VGS=10V
* Low gate charge (typical 13.5nC)
* High ruggedness
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 2014 KIA SEMICONDUCTORS

4N60H Distributors

📁 Related Datasheet

4N60 4N60-C 4N60-CB 4N60-E 4N60-N 4N60-Q

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4N60H N-CHANNEL MOSFET KIA

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