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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Complementary to BCW29/30.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC PC * Tj
30 20 5 100 350 150
Storage Temperature Range
Tstg -55 150
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
UNIT V V V mA mW
A G H
D
BCW31/32
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
23 1
PP
M 1. EMITTER 2. BASE 3. COLLECTOR
DIM A B C D E G H J
K L M
N P
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20
1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN
1.00+0.20/-0.10 7
SOT-23
C N K J
Marking
D1Type Name
Lot No.
BCW31 Datasheet
