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H13003ADL - Bipolar Junction Transistor

H13003ADL Description

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd.H13003ADL Bipolar Junction Transistor *Si NPN *RoHS COMPLIANT 1．APPLICATION Mainly .

H13003ADL Features

* Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Bas

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Datasheet Details

Part number
H13003ADL
Manufacturer
Jingdao
File Size
117.84 KB
Datasheet
H13003ADL-Jingdao.pdf
Description
Bipolar Junction Transistor

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Bipolar Junction Transistor Jingdao
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