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H13003AD - Bipolar Junction Transistor

H13003AD Description

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd.H13003AD Bipolar Junction Transistor *Si NPN *RoHS COMPLIANT 1．APPLICATION Fluoresce.

H13003AD Features

* High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-826 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VAL

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Datasheet Details

Part number
H13003AD
Manufacturer
Jingdao
File Size
116.31 KB
Datasheet
H13003AD-Jingdao.pdf
Description
Bipolar Junction Transistor

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Bipolar Junction Transistor Jingdao
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