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H13003D Bipolar Junction Transistor

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Description

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd.H13003D Bipolar Junction Transistor *Si NPN *RoHS COMPLIANT 1.APPLICATION Fluorescen.

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Datasheet Specifications

Part number
H13003D
Manufacturer
Jingdao Electronic
File Size
115.05 KB
Datasheet
H13003D-JingdaoElectronic.pdf
Description
Bipolar Junction Transistor

Features

* High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3.PACKAGE 1 VD TO-126D 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VA

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