HCS10MS Radiation Hardened Triple 3-Input NAND Gate

Intersil

Description

DATASHEET HCS10MS Radiation Hardened Triple 3-Input NAND Gate FN2435 Rev 0.00 September 1995 .
The Intersil HCS10MS is a Radiation Hardened Triple 3Input NAND Gate.

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Datasheet Specifications

Part number: HCS10MS
Manufacturer: Intersil
File Size: 384.21 KB
Datasheet: HCS10MS-Intersil.pdf
Description: Radiation Hardened Triple 3-Input NAND Gate

Features

* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ)
* Dose Rate Survivability: >1 x 1012 RAD (Si)/s
* Dose Rate Upset >101

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HCS10MS Radiation Hardened Triple 3-Input NAND Gate Intersil

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