RFP2N12 N-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor RFP2N12, RFP2N15 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching conv.

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Datasheet Specifications

Part number: RFP2N12
Manufacturer: Intersil Corporation
File Size: 35.20 KB
Datasheet: RFP2N12_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 2A, 120V and 150V
* rDS(ON) = 1.750Ω
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP2N 12, RFP2N1 5) /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChan

Applications

* such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09196. BRAND RFP2N12 R

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RFP2N12 N-Channel Power MOSFET Intersil Corporation

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