RFP2N08 N-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor RFP2N08, RFP2N10 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs .
These are N-channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching conv.

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Datasheet Specifications

Part number: RFP2N08
Manufacturer: Intersil Corporation
File Size: 46.74 KB
Datasheet: RFP2N08_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 2A, 80V and 100V
* rDS(ON) 1.05Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “Guidelines for Solderin

Applications

* such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282. July 1998 Fe

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RFP2N08 N-Channel Power MOSFET Intersil Corporation

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