RFP2N10L N-Channel Power MOSFET

Intersil Corporation

Description

RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10.
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Datasheet Specifications

Part number: RFP2N10L
Manufacturer: Intersil Corporation
File Size: 35.56 KB
Datasheet: RFP2N10L_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 2A, 80V and 100V
* rDS(ON) = 1.050Ω
* Design Optimized for 5V Gate Drives
* Can be Driven Directly from QMOS, NMOS, TTL Circuits
* Compatible with Automotive Drive Requirements
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds

Applications

* such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit su

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RFP2N10L N-Channel Power MOSFET Intersil Corporation

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