RF1S630SM 9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs

Intersil Corporation

Description

IRF630, RF1S630SM Data Sheet June 1999 File Number 1578.2 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon g.

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Datasheet Specifications

Part number: RF1S630SM
Manufacturer: Intersil Corporation
File Size: 62.35 KB
Datasheet: RF1S630SM_IntersilCorporation.pdf
Description: 9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs

Features

* 9A, 200V
* rDS(ON) = 0.400Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for S

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RF1S630SM 200V 0.400 Ohm N-Channel Power MOSFETs Intersil Corporation

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