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RF1S30N06LE 30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs

RF1S30N06LE Description

S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M.
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process.

RF1S30N06LE Features

* 30A, 60V
* rDS(ON) = 0.047Ω
* 2kV ESD Protected
* Temperature Compensating PSPICE Model
* Peak Current vs Pulse Width Curve

RF1S30N06LE Applications

* such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. PACKAGE AVAILABILITY PART NUMBER RFP30N0

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Datasheet Details

Part number
RF1S30N06LE
Manufacturer
Fairchild Semiconductor
File Size
91.17 KB
Datasheet
RF1S30N06LE_FairchildSemiconductor.pdf
Description
30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs

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30A 60V ESD Rated Avalanche Rated Logic Level N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor
Fairchild Semiconductor RF1S30N06LE-like datasheet