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HUF76609D3S - N-Channel MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www. Intersil. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Switching Time vs RGS Curves Ordering Information PART NUMBER.

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Other Datasheets by Intersil (Renesas)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet HUF76609D3, HUF76609D3S October 1999 File Number 4688.2 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE HUF76609D3 HUF76609D3S Symbol D G S Features • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE BRAND HUF76609D3 TO-251AA 76609D HUF76609D3S TO-252AA 76609D NOTE: When ordering, use the entire part number.