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HUF76619D3 - N-Channel MOSFET

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.085Ω, VGS = 10V - rDS(ON) = 0.087Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. Fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Switching Time vs RGS Curves Ordering Information PART NUMBER.

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Full PDF Text Transcription

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Data Sheet HUF76619D3, HUF76619D3S December 2001 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE HUF76619D3 DRAIN (FLANGE) GATE SOURCE HUF76619D3S Symbol D G S Features • Ultra Low On-Resistance - rDS(ON) = 0.085Ω, VGS = 10V - rDS(ON) = 0.087Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.Fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE BRAND HUF76619D3 TO-251AA 76619D HUF76619D3S TO-252AA 76619D NOTE: When ordering, use the entire part number.
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