Datasheet4U Logo Datasheet4U.com

HUF76629D3 - N-Channel MOSFET

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.052Ω, VGS = 10V - rDS(ON) = 0.054Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER© Electriecal Models - Spice and SABER Thermal Impedance Models - www. semi. harris. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE HUF76629D3 HUF76629D3S Symbol D.
  • Switching Time vs RGS Curves Ordering Information PART NUMBER.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HUF76629D3 N-Channel MOSFET Fairchild Semiconductor
HUF76629D3S N-Channel MOSFET Fairchild Semiconductor
HUF76629D3ST-F085 N-Channel Power MOSFET ON Semiconductor
HUF76609D3 N-Channel MOSFET Fairchild Semiconductor
HUF76609D3S N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by Intersil (Renesas)

Part Number Description
HUF76629D3S N-Channel MOSFET
HUF76609D3 N-Channel MOSFET
HUF76609D3S N-Channel MOSFET
HUF76619D3 N-Channel MOSFET
HUF76619D3S N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HUF76629D3,HUF76629D3S Data Sheet October 1999 File Number 4692.3 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.052Ω, VGS = 10V - rDS(ON) = 0.054Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electriecal Models - Spice and SABER Thermal Impedance Models - www.semi.harris.com • Peak Current vs Pulse Width Curve • UIS Rating Curve SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE HUF76629D3 HUF76629D3S Symbol D • Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE TO-251AA TO-252AA BRAND 76629D 76629D HUF76629D3 HUF76629D3S G S NOTE: When ordering, use the entire part number.
Published: |