HGTG20N60B3D - N-Channel IGBT

Intersil Corporation

Datasheet Details

Part number	HGTG20N60B3D
Manufacturer	Intersil Corporation
File Size	135.08 KB
Description	N-Channel IGBT
Datasheet	HGTG20N60B3D_IntersilCorporation.pdf

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching.

📁 HGTG20N60B3D Similar Datasheet

Other Datasheets by Intersil Corporation

Published: Mar 23, 2005 |