HGT1S3N60C3DS - 6A 600V UFS Series N-Channel IGBT

Intersil Corporation

Datasheet Details

Part number	HGT1S3N60C3DS
Manufacturer	Intersil Corporation
File Size	273.87 KB
Description	6A 600V UFS Series N-Channel IGBT
Datasheet	HGT1S3N60C3DS_IntersilCorporation.pdf

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |