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RIC7S113L4 - RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

Description

The RIC7S113L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Logic inputs are compatible with standard CMOS or LSTTL outputs.

Features

  • Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
RIC7S113 Radiation hardened high and low side gate driver
RIC7S113A4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
RIC7S113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
RIC7113A4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
RIC7113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

Full PDF Text Transcription

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PD-97828 RIC7S113L4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels VOFFSET IO+/VOUT ton/off (typ.) Delay Matching(typ.) 400V max.
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