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RIC7S113 - Radiation hardened high and low side gate driver

Datasheet Summary

Description

Orderable part number RIC7S113E4SCS RIC7S113E4SCB RIC7S113E4 RIC7S113L4SCS RIC7S113L4SCB RIC7S113L4 RIC7S113EVAL1 1 Per MIL-PRF-38535 2 Per MIL-PRF-38534 Package type Device class LCC CIC LCC CIC LCC CIC MO-036AB CIC MO-036AB CIC MO-036AB CIC Evaluation Board Level S1 Level B1 COTS Level S1 Lev

Features

  • Independent high and low side gate driver.
  • Independent bias supply for logic and power with ±5V offset.
  • Wide bias supply voltage range.
  • Undervoltage lockout for both channels.
  • CMOS Schmitt trigger inputs with internal pull-down resistor.
  • Integrated level shift for high side drive.
  • Cycle by cycle edge triggered shutdown logic pin.
  • Matched propagation delay for both channels.
  • Hermetically sealed package.
  • Lig.

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Datasheet Details

Part number RIC7S113
Manufacturer International Rectifier
File Size 744.30 KB
Description Radiation hardened high and low side gate driver
Datasheet download datasheet RIC7S113 Datasheet
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Full PDF Text Transcription

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PD-97827C RIC7S113 Radiation hardened high and low side gate driver Features • Independent high and low side gate driver • Independent bias supply for logic and power with ±5V offset • Wide bias supply voltage range • Undervoltage lockout for both channels • CMOS Schmitt trigger inputs with internal pull-down resistor • Integrated level shift for high side drive • Cycle by cycle edge triggered shutdown logic pin • Matched propagation delay for both channels • Hermetically sealed package • Lightweight • Total ionizing dose (TID) hardness o High dose rate (50-300 rad(Si)/s) of 100 krad(Si) • Single event effect (SEE) hardness o Safe operating area (SOA) defined for no SEB, SEGR up to LET of 81.9 MeV·cm2/mg o SET characterized up to LET of 81.
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